| PART |
Description |
Maker |
| IBMN312164CT3 IBMN312804CT3 |
128Mb(8Mbit x 4 I/O x 4 Bank) Synchronous DRAM(128M8Mx 4 I/O x 4 同步动态RAM)
128Mb(4Mbit x 8 I/O x 4 Bank) Synchronous DRAM(128M4Mx 8 I/O x 4 同步动态RAM)
|
IBM Microeletronics
|
| EM484M3244VTA-75F EM481M3244VTA-75FE EM482M3244VTA |
128Mb (1M】4Bank】32) Synchronous DRAM
128Mb (1M×4Bank×32) Synchronous DRAM
128Mb (1M隆驴4Bank隆驴32) Synchronous DRAM
|
Eorex Corporation
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| K4S281632F-UC75 K4S280432F-UC K4S280832F-UC75 K4S2 |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) 128Mb的的F -模与铅SDRAM的规4 TSOP-II免费（符合RoHS
CAP 0.1UF 100V 10% X7R SMD-1206 TR-7-PL 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| EM488M1644VTB EM488M1644VTB-75FL EM488M1644VTB-7FL |
128Mb (2Mx4Bankx16) Synchronous DRAM
|
Eorex Corporation
|
| EM488M1644VTE-6F EM488M1644VTE-6FE EM48BM1644VTE-6 |
128Mb (2M×4Bank×16) Synchronous DRAM
128Mb (2M】4Bank】16) Synchronous DRAM
|
Eorex Corporation
|
| EM484M3244VTC-75F EM484M3244VTC-6F |
128Mb (1M×4Bank×32) Synchronous DRAM
|
Eorex Corporation
|
| K4S281632D K4S281632D-L1H K4S281632D-L1L K4S281632 |
128Mb SDRAM, 3.3V, LVTTL, 133MHz
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
RF CONNECTOR; 1.6/5.6 PLUG, CRIMP ATTACHMENT FOR RG179 & RG187
; Current Rating:30mA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No
128Mb SDRAM, 3.3V, LVTTL, 166MHz
128Mb SDRAM, 3.3V, LVTTL, 183MHz
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K |
128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY57V64820HG HY57V64820HGLT-5 HY57V64820HGLT-55 HY |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
CAP 0.01UF 50V 5% X7R SMD-0805 TR-7 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
CAP 1500PF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
100PF50V_5%_NPO_,SM0603
CSM, CER 100PF 50V 5% 060
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HY57V28420HCLT-H HY57V28420HCLT-K HY57V28420HCLT |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
32Mx4|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 32Mx4 | 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
HYNIX SEMICONDUCTOR INC
TE Connectivity, Ltd.
|
