| PART |
Description |
Maker |
| MMBTA92 SMBTA92 SMBTA92/MMBTA92 |
High Voltage Transistors - SOT23 PNP High Voltage Transistor
PNP Silicon High Voltage Transistor
|
INFINEON[Infineon Technologies AG]
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| IRFS30N20D |
200V,30A SMPS MOSFET for High frequency DC-DC converters(200V,30A开关电MOSFET用于高频DC-DC变换
|
International Rectifier
|
| APT100S20LCT |
HIGH VOLTAGE SCHOTTKY DIODES 200V 100A
|
Advanced Power Technology
|
| APT2X100S20J APT2X101S20J |
HIGH VOLTAGE SCHOTTKY DIODES 高压肖特基二极管
CONNECTOR ACCESSORY 高压肖特基二极管
DUAL DIE ISOTOP PACKAGE HIGH VOLTAGE SCHOTTKY DIODES 200V 100A
|
Microsemi, Corp.
Advanced Power Technology, Ltd.
|
| BFN21 Q62702-F1059 |
From old datasheet system
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| G8338-02 G7871 G7871-02 G8795-02 G8338 G8341 G8341 |
TRANS PREBIASED PNP 150MW SOT523
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 200V; Case Size: 25x25 mm; Packaging: Bulk
InGaAs PIN photodiode with preamp
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| MJE5852 5471 |
HIGH VOLTAGE PNP POWER TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| PH5416 |
PNP high-voltage transistor 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
NXP Semiconductors N.V.
Philips Semiconductors
|
