PART |
Description |
Maker |
MC-4516CB646EF-A10 MC-4516CB646EF-A80 MC-4516CB646 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 DIMM-168 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC, Corp. NEC Corp.
|
MC-4516CD641XS-A10 MC-4516CD641XS-A80 |
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144 SOCKET TYPE, SODIMM-144 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
|
Elpida Memory, Inc.
|
MB8516SR72CA-103LDG MB8516SR72CA-102DG MB8516SR72C |
16M x 72Bit Synchronous DRAM DIMM 16M X 72 BIT SYNCHRONOUS DYNAMIC RAM DIMM
|
Fujitsu Component Limited. Fujitsu Limited
|
A48P4616 |
16M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
WEDPND16M72S-200BI WEDPND16M72S-200BM WEDPND16M72S |
200MHz; 2.5V power supply; 16M x 72 DDR SDRAM 250MHz; 2.5V power supply; 16M x 72 DDR SDRAM 266MHz; 2.5V power supply; 16M x 72 DDR SDRAM
|
White Electronic Designs
|
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90 4M x 32Bit x 4 Banks Mobile-SDRAM From old datasheet system
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYMD216M646C6-H HYMD216M646C6-J HYMD216M646C6-K HY |
Unbuffered DDR SO-DIMM 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54 16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp. NEC Corp. NEC[NEC]
|
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MN4SV17160BT-10 MN4SV17160BT-90 MN4SV1716BT-10 |
16M BIT SYNCHRONOUS DYNAMIC RAM
|
Panasonic Corporation http://
|
M390S1723CT1 |
16M x 72 SDRAM DIMM with PLL & Register based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
|
Samsung Electronic
|