| PART |
Description |
Maker |
| HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM
32M X 16 DDR DRAM, 0.45 ns, PBGA84
128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| K4H560838H-UC/LCC K4H561638H-UC/LCC K4H560438H-UC/ |
32M X 8 DDR DRAM, 0.7 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
32M X 8 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
64M X 4 DDR DRAM, 0.75 ns, PDSO66 ROHS COMPLIANT, TSOP2-66
256Mb H-die DDR SDRAM Specification
|
Atmel, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HB54A2568FM-A75B HB54A2569FM-A75B HB54A2569FM-10B |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
256MB Unbuffered DDR SDRAM DIMM
|
ELPIDA MEMORY INC
|
| EDD5108ADTA-7BTI EDD5116ADTA-7BTI EDD5108ADTA-TI D |
512M bits DDR SDRAM WTR (Wide Temperature Range)
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elpida Memory
ELPIDA MEMORY INC
|
| MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100
128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100
64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| AS4DDR32M72PBG1-6_ET AS4DDR32M72PBG1-6_IT AS4DDR32 |
32M X 72 DDR DRAM, 0.8 ns, PBGA208 16 X 23 MM, 1 MM PITCH, PLASTIC, BGA-208
32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor, Inc
|
| E5116ABSA-5A-E |
32M X 16 DDR DRAM, 0.5 ns, PBGA84
|
ELPIDA MEMORY INC
|
| W9751G6JB-25I W9751G6JB-18 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84
32M X 16 DDR DRAM, 0.35 ns, PBGA84
|
WINBOND ELECTRONICS CORP
|
| HYB18TC256800AF-3.7 |
32M X 8 DDR DRAM, 0.5 ns, PBGA60
|
QIMONDA AG
|
| MT46H32M32LFCG-5A |
32M X 32 DDR DRAM, PBGA152
|
|
| H5DU2582GTR-E3C |
32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
