| PART |
Description |
Maker |
| D1031SH |
Fast Hard Drive Diod e
|
eupec GmbH
|
| IRG4BC15UD-LPBF IRG4BC15UD-SPBF IRG4BC15UD-L IRG4B |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| IRF7807D1TR IRF7807D1-TR |
8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
30V FETKY - MOSFET and Schottky Diode in a SO-8 package
|
International Rectifier
|
| NTLJF3118N NTLJF3118NTAG NTLJF3118NTBG |
Power MOSFET and Schottky Diode 20 V, 4.6 A, uCool N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package
|
ON Semiconductor
|
| STB60NH02L04 STB60NH02LT4 STB70NFS03L06 STB70NFS03 |
N-Channel 24V - 0.0062ohm - 60A - D2PAK STripFET TM III Power MOSFET
N-channel 30V - 0.0075ohm - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET TM II Power MOSFET
10 OHM, Quad, SPST, CMOS Analog Switches
RADIATION HARD 4096 x 1 BIT STATIC RAM
4 Mbit (512 Kbit x 8) ZEROPOWER SRAM
5.0 V PC real-time clock
N-channel 60V - 0.0075ohm - 70A - D2PAK STripFET TM III Power MOSFET for DC-DC conversion
N-channel - 30V - 0.0075ohm - 70A D2PAK STripFET TM Power MOSFET plus schottky rectifier
N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET
N-CHANNEL 24V - 0.0085 ohm - 60A D2PAK STripFET TM III POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
MAXIM
ZARLINK
|
| NTLJF3118N |
Power MOSFET and Schottky Diode 20 V, 4.6 A, μCool™ N-Channel, with 2.0 A Schottky Barrier Diode
|
ON Semiconductor
|
| DMS3014SSS-13 DMS3014SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
10.4 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| AM29DL800BT70RWBC AM29DL800BB70RSI AM29DL800BT70RS |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRLU9343-701 with Lead-Free packaging
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7404 with Lead Free Packaging x8/x16闪存EEPROM
-100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; A IRFR5410 with Standard Packaging x8/x16闪存EEPROM
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7807D2 with Standard Packaging x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
30V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7807VD1 with Lead Free Packaging
|
Advanced Micro Devices, Inc.
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
|
