| PART |
Description |
Maker |
| SUD50P06-15L |
P-Channel, Tj = 175 °C power MOSFET; low leakage current; P通道，Tj=175℃，低漏电流
P-Channel 60-V (D-S), 175C MOSFET
P-Channel 60-V (D-S) 175C MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SUD50P10-43L-E3 |
P-Channel 100-V (D-S) 175 C MOSFET
|
Vishay Siliconix
|
| SUD50P10-43L |
P-Channel 100 V (D-S) 175 °C MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| SUU50N10-18P-E3 |
N-Channel 100-V (D-S), 175 隆?C MOSFET
N-Channel 100-V (D-S), 175 °C MOSFET
|
Vishay Siliconix
|
| SUM60N10-1708 SUM60N10-17 |
N-Channel 100-V (D-S) 175 °C MOSFET
N-Channel 100-V (D-S) 175 ∑C MOSFET
|
Vishay Siliconix
|
| SQ2328ES |
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| SQP120N10-3M8-15 |
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| SQM47N10-24L-15 |
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| SQM40N10-30-15 |
Automotive N-Channel 100 V (D-S) 175 °C MOSFET
|
Vishay Siliconix
|
| APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUD40N03-18P |
N-Channel 30-V (D-S) 175 MOSFET
N-Channel 30-V (D-S) 175隆? MOSFET
N-Channel 30-V (D-S) 175C MOSFET
N-Channel 30-V (D-S) 175∩ MOSFET
N-Channel 30-V (D-S) MOSFET
|
VISAY[Vishay Siliconix]
|
