| PART |
Description |
Maker |
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177 |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A C367177A |
From old datasheet system
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应
From old datasheet system
|
Rohm Co., Ltd.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| SZM-2066Z |
2.4-2.7GHz 2W Power Amplifier
|
http://
Sirenza Microdevices, Inc
|
| RFPA2226SQ RFPA2226-EVB1 RFPA2226-EVB2 |
2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER
|
RF Micro Devices
|
