| PART |
Description |
Maker |
| BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve...
From old datasheet system
NPN Silicon Transistors with High Reverse Voltage
Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
NPN Silicon RF Transisrors
NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管（高耐压l低集电极发射极饱和电压）
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| 826LBB400M2BC 107LBB400M2BD 187LBB400M2BF 107LBB35 |
Multiple Case Sizes - High Voltage ?High Current
Multiple Case Sizes - High Voltage ?High Current
|
Illinois Capacitor, Inc...
|
| 337LMB250M2BE 399LMB010M2DF 477LMB250M2BH 397LMB25 |
Multiple Case Sizes - High Voltage ?High Current
Multiple Case Sizes - High Voltage ?High Current
|
Illinois Capacitor, Inc...
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BF622 Q62702-F1052 |
From old datasheet system
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| HZU16B1TRF-E HZU2.7B1TLF HZU2.0BTLF HZU2.4BTRF-E H |
15.69 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.625 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.05 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.45 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.925 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.225 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.25 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.525 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.075 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
3.375 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
2.775 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
7.21 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5.795 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
4.515 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
30 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
23.445 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
21.325 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
|
| LM4040AIM3-2.1-T LM4040AIM3-2.5-T LM4040AIM3-3.0-T |
2.048 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
2.5 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
3.0 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
4.096 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
5.0 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
3.3 V, improved precision micropower shunt voltage reference with multiple reverse breakdown voltage
|
MAXIM - Dallas Semiconductor
|
| 2SA1831 0165 |
PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| 2SC4475 |
NPN Triple Diffused Planar Silicon Transistor 1800V/3mA High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SC4257 0458 |
NPN Triple Diffused Planar Silicon Transistor 1200V/30mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
|
Sanyo
|
| 2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
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