| PART |
Description |
Maker |
| T431616B-20S T431616B T431616B-10C T431616B-10S T4 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| M12S16161A07 M12S16161A-7BG M12S16161A-7TG |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| MT48LC1M16A1 |
512K x 16 x 2 banks IT SDRAM(512K x 16 x 2同步动态RAM（工业温度）)
|
Micron Technology, Inc.
|
| HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| M52D16161A09 M52D16161A-10TG M52D16161A-10BG M52D1 |
512K x 16Bit x 2Banks Mobile Synchronous DRAM
|
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
|
| R1LV0816ABG-5SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| EM782SP16A EM782SP16A-10L EM782SP16A-10LL EM782SP1 |
512K x 16Bit Multiplexed Single Transistor RAM
|
Emerging Memory & Logic Solutions Inc
|
| W9816G6BB-7 W9816G6BB |
BGA SDRAM
512K X 2 BANKS X 16 BITS SDRAM
From old datasheet system
|
Winbond Electronics
|
| K4S161622D-TC/L/I/P |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| W981616BH |
SDRAM 1Mx16
512K ′ 2 BANKS ′ 16 BITS SDRAM
|
Winbond Electronics
|
| T436416D-5CG T436416D-5S T436416D-5SG T436416D-6SG |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
