| PART |
Description |
Maker |
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AD8517 AD8517ART-REEL AD8527 AD8527AR AD8527ARM-RE |
Low Voltage, High Slew Rate, Low Noise, 7 MHz Rail-to-Rail Op Amp, Single; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial OP-AMP, 5000 uV OFFSET-MAX, 7 MHz BAND WIDTH, PDSO5
7 MHz Rail-to-Rail Low Voltage Operational Amplifiers
Low Voltage, High Slew Rate, Low Noise, 7 MHz Rail-to-Rail Op Amp, Dual
|
Analog Devices, Inc.
AD[Analog Devices]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HA2-5137883 HA7-5137883 HA-5137_883 HA4-5137883 FN |
DIODE SCHOTTKY DUAL COMMON-CATHODE 30V 350mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-23 3K/REEL
60MHz/ Ultra Low Noise/ Precision Operational Amplifier
60MHz, Ultra Low Noise, Precision Operational Amplifier
60MHz Ultra Low Noise Precision Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| 5962-88502012A |
Dual and Quad, 8MHz and 60MHz, Low Noise Operational Amplifiers; Temperature Range: -55°C to 125°C; Package: 20-CLCC QUAD OP-AMP, 2500 uV OFFSET-MAX, 8 MHz BAND WIDTH, CQCC20
|
Intersil, Corp.
|
| K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/ |
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| OP-37AJ OP-37AZ OP-37BJ OP-37BZ OP-37CJ OP-37CZ OP |
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
703.02 Kbytes
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5)
LOW NOISE, PRECISION, HIGH SPEED OPERATIONAL AMPLIFIER(AVCL>=5) OP-AMP, 200 uV OFFSET-MAX, 63 MHz BAND WIDTH, CQCC20
|
AD[Analog Devices]
Analog Devices, Inc.
|
| HS9-OP470ARH-Q HS-OP470AR HS-OP470ARH 5962R9853301 |
16 AMP SPDT MINIATURE POWER RELAY
Radiation Hardened, Very Low Noise
Quad Operational Amplifier(抗辐射低噪声四路运算放大
Radiation Hardened, Very Low Noise Quad Operational Amplifier
Radiation Hardened/ Very Low Noise Quad Operational Amplifier
|
Intersil Corporation
|
| IDT7016S20JB IDT7016S20PFB IDT7016S15G IDT7016S15P |
Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70 16K X 9 DUAL-PORT SRAM, 25 ns, PQCC68
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM 16K X 9 DUAL-PORT SRAM, 35 ns, CPGA68
Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85 16K X 9 DUAL-PORT SRAM, 35 ns, PQFP80
Low-Noise JFET-Input Decompensated Operational Amplifier 8-SOIC -40 to 85 16K X 9 DUAL-PORT SRAM, 15 ns, PQFP80
Low-Power JFET-Input Quad Operational Amplifier 14-CFP -55 to 125 16K X 9 DUAL-PORT SRAM, 15 ns, CPGA68
Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70 16K X 9 DUAL-PORT SRAM, 20 ns, PQFP80
Low-Noise JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70 16K X 9 DUAL-PORT SRAM, 20 ns, PQCC68
|
Integrated Device Techn...
Integrated Device Technology, Inc.
|
| HA1-5104_883 HA-5104883 HA-5104/883 |
Op Amp, Quad 8MHz, Unity Gain Stable, Low Noise, 883 Compliant
Low Noise, High Performance, Quad Operational Amplifier
|
INTERSIL[Intersil Corporation]
|
