| PART |
Description |
Maker |
| PS21965-4 PS21965-4A PS21965-4C PS21965-4W |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21963-4E PS21963-4E09 PS21963-4CE PS21963-4EW PS |
Dual-In-Line Package Intelligent Power Module
600V/8A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET
N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http://
STMicroelectronics
|
| PS21962-S |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-A PS21962-C |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| STW20NM60 |
N-CHANNEL Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh?Power MOSFET
N-CHANNEL 600V - 0.26ohm - 20A TO-247 MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| PS21964-4S |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| 6MBI20GS-060 |
IGBT(600V 20A)
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| IRG4PC40U IRG4PC40U-EPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
|
Vishay Intertechnology, Inc.
International Rectifier
|
| S20WB60 |
Bridge Diode(600V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
