| PART |
Description |
Maker |
| OD-850-008 |
High Temperature GaAlAs IR Emitters
|
OptoDiode Corp
|
| OD-880LHT |
HIGH TEMPERATURE GaAlAs IR EMITTERS
|
OptoDiode Corp
|
| EMIF10-COM01 |
EMI滤波器包括静电放电保
±15kV ESD Protected, 3.3V, Full Fail-safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers; Temperature Range: -40°C to 85°C; Package: 8-MSOP
EMI FILTER INCLUDING ESD PROTECTION
EMI FILTER INCLUDING ESD PROTECTION
|
STMicroelectronics
ST Microelectronics
|
| 127141D |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 190150 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
List of Unclassifed Manufacturers
|
| 126284 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| 136274 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
| SFH426 SFH421 Q62703-P0331 Q62702-P1055 |
GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package 发动器红外光在SMT Lumineszenzdiode，在SMT Geh锓包GaAlA红外发射
GaAlAs-IR-Lumineszenzdiode in 3.0 SMT-Gehuse GaAlAs Infrared Emitter in SMT Package
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 123144H |
GaAlAs / GaAlAs LED Chips
|
OSA Opto Light GmbH
|
| Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| OD-880L |
HIGH-POWER GaAlAs IR EMITTERS
|
OptoDiode
|
