| PART |
Description |
Maker |
| UES1401 UES1402 UES1403 UES1404 BYW80 BYW80-150 BY |
; Number of Conductors:2; Conductor Size AWG:20; No. Strands x Strand Size:7 x 28; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape; Shielding Coverage:100%; Capacitance:56pF/ft RoHS Compliant: Yes
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
Access Control Composite Cable; Composite Conductor Types:10 Conductors 3 Pairs; Number of Conductors:16; Conductor Size AWG:18-16; No. Strands x Strand Size:7 x 26, 19 x 30; Jacket Material:Thermoplastic; Number of Pairs:3 RoHS Compliant: Yes
(UES1402 / UES1403 / UES1404) RECTIFIERS
|
MICROSEMI CORP-COLORADO
MICROSEMI[Microsemi Corporation]
|
| XP4401 XP04401 |
Composite Device - Composite Transistors
Silicon PNP epitaxial planer transistor
|
PANASONIC[Panasonic Semiconductor]
|
| XN01211 XN1211 XN01211XN1211 |
SILICON NPN EPITAXIAL PLANER TRANSISTOR
Composite Device - Composite Transistors
|
Panasonic Corporation
Panasonic Semiconductor
|
| XN1C301 XN0C301 |
Composite Device - Composite Transistors
Silicon PNP epitaxial planer transistor (Tr1)
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| XN0121M |
Composite Device - Composite Transistors 复合设备-复合晶体
Silicon NPN epitaxial planar type
|
Panasonic Industrial Solutions
Panasonic Semiconductor
|
| XP01118 XP01118XP1118 |
妖合デバイス 妖合トランジスタ
Composite Device - Composite Transistors
|
Panasonic
|
| XN421N XN0421N |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Panasonic, Corp.
|
| XN01115 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN6116 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Panasonic, Corp.
|
| XN06534 XN06534XN6534 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XP05554 |
Composite Device - Composite Transistors
|
Panasonic
|
| XN01112 |
Composite Device - Composite Transistors
|
panasonic
|
