PART |
Description |
Maker |
TC2998E |
2.5-2.7GHz 20W Packaged GaAs Power FETs
|
Transcom, Inc.
|
MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MAAM37000 |
Low Noise GaAs MMIC Amplifier 3.5-7GHz
|
MACOM[Tyco Electronics]
|
MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFC36V7177A C367177A |
From old datasheet system 7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFX39V0717 X390717 |
10.7 - 11.7GHz BAND 8W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段8瓦特国内MATCHD砷化镓场效应 From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
TC2896 |
5 W Flange Ceramic Packaged GaAs Power FETs
|
TRANSCOM
|
CMM1118-QT-0G0T PB-CMM1118-0000 CMM1118-QT CMM1118 |
11.0-20.0 GHz GaAs MMIC Packaged Driver Amplifier
|
MIMIX[Mimix Broadband]
|
TC2997C |
2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
|
Transcom, Inc.
|