| PART |
Description |
Maker |
| RXAMDC5108101-003 RXAMDC5108102-003 |
2.5 Gb/s Front-Illuminated APD Chip
|
JDS Uniphase Corporation
|
| S8658-01 |
Front-illuminated FFT-CCD for X-ray imaging
|
Hamamatsu Corporation
|
| S8986 |
CCD area image sensor Front-illuminated FFT-CCDs for X-ray imaging
|
Hamamatsu Corporation
|
| S9978 |
CCD area image sensor Front-illuminated FFT-CCDs, high IR sensitivity
|
Hamamatsu Corporation
|
| S7847-1007 S7847-1008 |
CCD area image sensor High IR sensitivity, four-stage TE-cooled, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
|
| S9972-1007 S9972-1008 S9973-1007 S9973-1008 S99720 |
CCD area image sensor Front-illuminated FFT-CCD, high near IR sensitivity
|
Hamamatsu Corporation
|
| S9737-01 S9737-03 |
CCD area image sensor 1024 1024 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Photonics
|
| S4402 |
Si APD φ1 mm quadrant APD
Si APD ヵ1 mm quadrant APD
|
Hamamatsu Corporation
|
| NR8500 NR8500FR-BB-AZ NR8500FR-CB-AZ NR8500CP-BC-A |
CAP 1.0PF 25V .10 PF NP0(C0G) SMD-0603 TR-7 PLATED-NI/SN
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓APD的同轴包55字节/秒和622 Mb / s的应
NECs 050 um InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS 邻舍050微米铟镓砷APD的同轴包55字节/秒和622 Mb / s的应
NECs φ50 μm InGaAs APD IN COAXIAL PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
California Eastern Laboratories, Inc.
California Eastern Labs
|
| LP2S1TRNN LP2S2TRNN LP2S1WHTWHTN LP2S2WHTWHTN LP2S |
PUSHBUTTON SWITCHES - ILLUMINATED
PUSHBUTTON SWITCH, SPST, MOMENTARY, 0.005A, 5VDC, THROUGH HOLE-STRAIGHT
PUSHBUTTON SWITCHES - ILLUMINATED
|
E-Switch, Inc.
|
| G8931-04 |
InGaAs APD
|
Hamamatsu Corporation
|
| SSO-ADH-230-TO8P |
APD with Peltier-cooler
|
Roithner LaserTechnik GmbH
|
