| PART |
Description |
Maker |
| MA4VAT907-1061T |
High IIP3 PIN Diode Variable Attenuator 0.80-1.0 GHz
|
MACOM[Tyco Electronics]
|
| MA4VAT2004-1061T MA4VAT2004-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 1.7 - 2.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| 1N4981D 1N4973C 1N4955D 1N4957D 1N4957C 1N4964D 1N |
Diode Zener Single 91V 1% 5W 2-Pin Case E
Diode Zener Single 43V 2% 5W 2-Pin Case E
Diode Zener Single 7.5V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 1% 5W 2-Pin Case E
Diode Zener Single 9.1V 2% 5W 2-Pin Case E
Diode Zener Single 18V 1% 5W 2-Pin Case E
Diode Zener Single 10V 2% 5W 2-Pin Case E
Diode Zener Single 12V 1% 5W 2-Pin Case E
Diode Zener Single 51V 1% 5W 2-Pin Case E
Diode Zener Single 36V 2% 5W 2-Pin Case E
Diode Zener Single 15V 1% 5W 2-Pin Case E
Diode Zener Single 20V 1% 5W 2-Pin Case E
Diode Zener Single 75V 1% 5W 2-Pin Case E
Diode Zener Single 100V 2% 5W 2-Pin Case E
Diode Zener Single 100V 1% 5W 2-Pin Case E
Diode Zener Single 11V 1% 5W 2-Pin Case E
Diode Zener Single 75V 2% 5W 2-Pin Case E
Diode Zener Single 56V 1% 5W 2-Pin Case E
Diode Zener Single 24V 1% 5W 2-Pin Case E
Diode Zener Single 24V 2% 5W 2-Pin Case E
Diode Zener Single 10V 1% 5W 2-Pin Case E
Diode Zener Single 13V 2% 5W 2-Pin Case E
Diode Zener Single 30V 1% 5W 2-Pin Case E
Diode Zener Single 39V 1% 5W 2-Pin Case E
|
New Jersey Semiconductor
|
| MV1404 MV1403 |
120 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA GLASS, DO-7, 2 PIN
175 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-204AA GLASS, DO-7, 2 PIN
|
ON Semiconductor
|
| MV104ZL1 MV104RLRP MV104RLRA MV104RLRAG |
39.5 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-92 CASE 29-11, TO-226AA, 3 PIN
39.5 pF, 32 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-92 CASE 29-11, TO-226AA, 3 PIN
|
ON Semiconductor
|
| MA4VAT900-1277T |
HMIC PIN Diode Variable Attenuator 0.80-1.0 GHz
|
MACOM[Tyco Electronics]
|
| MAAV-007088-000100 MAAV-007088-0001TB MAAV-007088- |
PIN Diode Based Variable Attenuator, 50 - 1000 MHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN
Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
| BBY5907 BBY59-02V |
27.8 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE SC-79, 2 PIN
Silicon Tuning Diode
|
EUPEC GMBH ?CO KG
Infineon Technologies AG
Infineon Technologies A...
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| GCX1205-23 GCX1217-23 GCX1206-23 GCX1213-23 GCX120 |
10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
5.6 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
1.2 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
VARACTOR DIODES Surface Mount SOT23 Abrupt Junction TM
3.9 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
|
