| PART |
Description |
Maker |
| N08M1618L1AW N08M1618L1A N08M1618L1AB N08M1618L1AB |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K 】 16 bit
512K X 16 STANDARD SRAM, 150 ns, PBGA48 BGA-48
|
AMI[AMI SEMICONDUCTOR]
Unisonic Technologies Co., Ltd.
|
| 62WV5128ALL IS62WV5128ALL-70T2 IS62WV5128ALL-70T2I |
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
512K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IS62WV51216ALL IS62WV51216BLL |
(IS62WV51216A(B)LL) 512K x 16 Low Voltage / Ultra Low Power CMOS SRAM
|
Integrated Silicon Solution
|
| BH62UV4000HIG55 BH62UV4000STI55 BH62UV4000DIG55 BH |
Ultra Low Power/High Speed CMOS SRAM 512K X 8 bit
|
Brilliance Semiconductor
|
| N08T1630CXB |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit
|
NanoAmp Solutions
|
| BH616UV8010TC BH616UV8010TI BH616UV8010TIG70 BH616 |
Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit
|
Brilliance Semiconducto...
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| P4C1048L-70CWI P4C1048L-45PMB P4C1048L-45SMB P4C10 |
LOW POWER 512K x 8 CMOS STATIC RAM 低功率为512k × 8的CMOS静态RAM
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 45 ns, PDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 100 ns, PDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 55 ns, CDIP32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, PDSO32
LOW POWER 512K x 8 CMOS STATIC RAM 512K X 8 STANDARD SRAM, 70 ns, CDIP32
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| 89LV1632RPQK-30 |
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM 16兆位12k × 32的位）低压亿立方米的SRAM
|
Maxwell Technologies, Inc
|
| GLT6100L08LL-55TC GLT6100L08LL-70TC GLT6100L08LL-8 |
55ns; Ultra low power 64K x 16 CMOS SRAM
70ns; Ultra low power 64K x 16 CMOS SRAM
85ns; Ultra low power 64K x 16 CMOS SRAM
100ns; Ultra low power 64K x 16 CMOS SRAM
|
G-LINK Technology
|
| HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
