| PART |
Description |
Maker |
| AS098C60W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS098Q1200W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081Q3000W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| AS081C60W |
High Power Stacked Infrared Laser Diode Array
|
Roithner LaserTechnik GmbH
|
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6411GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| MMAD1108 MMAD1108E3/TR13 |
Switching Diode Array Steering Diode TVS Array
Diode Array; UNIDIRECTIONAL, 8 ELEMENT, SILICON, TVS DIODE
|
Microsemi Corporation
Microsemi, Corp.
|
