| PART |
Description |
Maker |
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| AMMC-5620 AMMC-5620-W10 AMMC-5620-W50 |
6 - 20 GHz High Gain Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| RFMA7090-1W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| RFMA1415-1W-Q7 |
14.4 - 15.4 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| AD8354ACP-R2 AD8354-EVAL AD8354ACP-REEL7 |
100 MHz-2.7 GHz RF Gain Block
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers
|
Analog Devices, Inc.
|
| LD7267 |
30 GHz / 100 W CW / CONDUCTION COOLING / HIGH POWER GAIN
30 GHz, 100 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC
|
| LD7263 |
14 GHz / 750 W CW / CONDUCTION COOLING / HIGH POWER GAIN
14 GHz, 750 W CW, CONDUCTION COOLING, HIGH POWER GAIN
|
NEC Corp.
NEC[NEC]
|
| BNT01 |
1.5 -3.0 GHz Wideband High Linearity LNA Gain Block
|
BeRex Corporation
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| CGD1042HI |
1 GHz, 22 dB gain GaAs high output power doubler
|
NXP Semiconductors
|
