| PART |
Description |
Maker |
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| SST12LP19E-NR |
2.4 GHz High-Gain, High-Efficiency Power Amplifier
|
Microchip Technology
|
| HMMC-5620 |
6-20 GHz High-Gain Amplifier
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| LD4606A |
30 GHz, 380 W CW, HIGH EFFICIENCY, HIGH POWER GAIN
30 GHz 380 W CW HIGH EFFICIENCY HIGH POWER GAIN
|
NEC[NEC]
|
| RFMA7090-0.5W-Q7 |
7.0 - 9.0 GHz High Gain Surface-Mounted PA
|
Excelics Semiconductor, Inc.
|
| LD7215W |
6 GHz / 3 kW CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz, 3 kW CW, PPM FOCUSING, HIGH POWER GAIN
|
NEC[NEC]
|
| ACA2784 |
1 GHz, 21 dB Gain High Output Power DoublerAmplifier
|
ANADIGICS, Inc
|
| BNT01 |
1.5 -3.0 GHz Wideband High Linearity LNA Gain Block
|
BeRex Corporation
|
