PART |
Description |
Maker |
150KR60 150KSR10 150KSR40 150KSR30 150KR20 150KR30 |
Diode Switching 600V 150A 2-Pin DO-8 Diode Switching 100V 150A 2-Pin Case B-42 Diode Switching 400V 150A 2-Pin Case B-42 Diode Switching 300V 150A 2-Pin Case B-42 Diode Switching 200V 150A 2-Pin DO-8 Diode Switching 300V 150A 2-Pin DO-8
|
New Jersey Semiconductor
|
NSDEMN11XV6T1 NSDEMN11XV6T5 NSDEMN11DXV6T1/D |
Small Signal Switching Diodes in SOT563 Common Cathode Quad Array Switching Diode Common Cathode Switching Diode 共阴极开关二极管
|
ONSEMI[ON Semiconductor]
|
MMBD4448HW-7-F |
Switching Diodes SURFACE MOUNT SWITCHING DIODE 0.25 A, 80 V, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
BAW56 Q62702-A688 BAW56-BOXREELOF3K |
ER 3C 3#12 SKT PLUG 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE INVERTER 12V-INPUT 1700V-OUTPUT Programmable Skew Clock Buffer Silicon Switching Diode Array (For high-speed switching applications Common anode)
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|
CMEDA-6I |
SMD Switching Diode QUAD: MONOLITHIC SURFACE MOUNT SUPERmini MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY
|
CENTRAL[Central Semiconductor Corp]
|
Q67040S4714 IKP04N60T |
600V & 1200V IGBT for frequencies up to 10kHz for hard switching and up to 30kHz for soft switching with antiparallel diode. ... Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
INFINEON[Infineon Technologies AG]
|
CMDD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
CMHD7006 |
SMD Switching Diode Single: High Voltage SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
MMBD7000 MMBD7000-TP |
225mW 100Volt Dual Switching Diode DIODE SW DUAL 100V 150MA SOT23 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35 SWITCHING DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|