| PART |
Description |
Maker |
| 1N4793A 1N4815B 1N4800A 1N4815A 1N4794A 1N4805 1N4 |
Diode VAR Cap Single 22V 27pF 2-Pin DO-7
Diode VAR Cap Single 22V 100pF 2-Pin DO-7
Diode VAR Cap Single 17V 100pF 2-Pin DO-7
Diode VAR Cap Single 22V 33pF 2-Pin DO-7
Diode VAR Cap Single 110V 15pF 2-Pin DO-7
Diode VAR Cap Single 99V 18pF 2-Pin DO-7
Diode VAR Cap Single 22V 18pF 2-Pin DO-7
Diode VAR Cap Single 72V 27pF 2-Pin DO-7
Diode VAR Cap Single 28V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 22V 22pF 2-Pin DO-7
Diode VAR Cap Single 22V 47pF 2-Pin DO-7
Diode VAR Cap Single 28V 10pF 2-Pin DO-7
Diode VAR Cap Single 110V 10pF 2-Pin DO-7
Diode VAR Cap Single 28V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 55V 47pF 2-Pin DO-7
Diode VAR Cap Single 33V 68pF 2-Pin DO-7
Diode VAR Cap Single 61V 39pF 2-Pin DO-7
|
New Jersey Semiconductor
|
| 1N5468B 1N5466B 1N5475D 1N5475C 1N5462C 1N5463A 1N |
Diode VAR Cap Single 30V 22pF 2-Pin DO-7
Diode VAR Cap Single 30V 18pF 2-Pin DO-7
Diode VAR Cap Single 30V 82pF 2-Pin DO-7
Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7
Diode VAR Cap Single 30V 10pF 2-Pin DO-7
Diode VAR Cap Single 30V 20pF 2-Pin DO-7
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 47pF 2-Pin DO-7
Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductors
|
| 1N445 1N316 1N440 1N547 1N535 1N539 1N536 1N533 1N |
GOLD BONDED GERMANIUM DIODES
Diode Zener Single 8.4V 5% 500mW 2-Pin DO-7
Diode Zener Single 68V 5% 1.5W 2-Pin DO-41
Diode Switching 400V 3A 2-Pin SOD-64 Ammo
Diode Zener Single 87V 5W 2-Pin DO-201AE
Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R
|
New Jersey Semiconductor
|
| CMXSTB200 CMXSTB400 CMXSTB300 CMXSTB200LEADFREE CM |
3 ELEMENT, SILICON, SIGNAL DIODE SOT-26, 6 PIN
2 ELEMENT, SILICON, SIGNAL DIODE SOT-26, 6 PIN
SURFACE MOUNT FORWARD REFERENCE DIODE (STABISTOR)
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| SML-LX15SYC-RP-TR |
SINGLE COLOR LED, SUPER YELLOW, 3 mm LEAD FREE, SOT-23, 3 PIN
SOT-23 REPLACEMENT
|
Lumex, Inc.
LUMEX INC.
|
| 1N5456A 1N5440 1N5454A 1N5451A 1N5452A 1N5453A |
Diode VAR Cap Single 30V 100pF 2-Pin DO-7
Diode VAR Cap Single 30V 4.7pF 2-Pin DO-7
Diode VAR Cap Single 30V 68pF 2-Pin DO-7
Diode VAR Cap Single 30V 39pF 2-Pin DO-7
Diode VAR Cap Single 30V 47pF 2-Pin DO-7
Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductor
|
| KBP005M KBP02M KBP01M KBP04M KBP08M KBP06M KBP10M |
Diode Rectifier Bridge Single 50V 1.5A 4-Pin Case KBPM
Diode Rectifier Bridge Single 200V 1.5A 4-Pin Case KBPM
Diode Rectifier Bridge Single 100V 1.5A 4-Pin Case KBPM
Diode Rectifier Bridge Single 400V 1.5A 4-Pin Case KBPM
Diode Rectifier Bridge Single 800V 1.5A 4-Pin Case KBPM
Diode Rectifier Bridge Single 600V 1.5A 4-Pin Case KBPM
Diode Rectifier Bridge Single 1KV 1.5A 4-Pin Case KBPM
|
New Jersey Semiconductor
|
| AD5660ARJZ-1500RL7 AD5660ARJZ-2500RL7 AD5660ARJZ-2 |
SERIAL INPUT LOADING, 8 us SETTLING TIME, 16-BIT DAC, PDSO8 ROHS COMPLIANT, MO-178BA, SOT-23, 8 PIN
Single, 12-/14-/16-Bit nanoDAC with 5 ppm/°C On-Chip Reference in SOT-23
Single, 12-/14-/16-Bit nanoDAC with 5 ppm/°C On-Chip Reference in SOT-23
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4 |
DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL
256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| S392D05 S392D-GS08 S392D-GS18 |
RF PIN Diode - Dual in SOT-23
|
Vishay Siliconix
|
