| PART |
Description |
Maker |
| FGH40N6S2D FGH40N6S2DNL |
75 A, 600 V, N-CHANNEL IGBT, TO-247
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FFD08S60S FFD08S60SF085 |
8A, 600V STEALTHII Rectifier
STEALTHTM II Rectifier 8A, 600V Stealth2 Rectifier
|
Fairchild Semiconductor
|
| GMR30H150CTPF3T GMR30H150C GMR30H150CTA3R GMR30H15 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIE
|
GAMMA[Gamma Microelectronics Inc.]
|
| RHRP640CC FN4464 RHRP660CC RHRP650CC |
6A, 600V Ultrafast Dual Diodes(6A, 600V 瓒?揩??????)
6A/ 400V - 600V Hyperfast Dual Diodes
6A, 600V Ultrafast Dual Diodes(6A, 600V 超快双二极管)
6A, 400V - 600V Hyperfast Dual Diodes
From old datasheet system
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
| RHRD660S FN3746 RHRD660 |
6A, 600V Hyperfast Diodes(6A,600V 超快速二极管)
6A/ 600V Hyperfast Diodes
6A 600V Hyperfast Diodes
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| HGT1S7N60B3S HGTP7N60B3 HGT1S7N60B3S9A HGTD7N60B3S |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|7A一（c）|63AB
14A, 600V, UFS Series N-Channel IGBTs
|
Cypress Semiconductor, Corp.
Fairchild Semiconductor
|
| IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRG4BC40U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.72V, @Vge=15V, Ic=20A)
|
International Rectifier
|
