| PART |
Description |
Maker |
| SCH2815 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5801 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
| VEC2820 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2830 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2819 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5857 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| CPH5847 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5837 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| SCH2809 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| BF1005R BF1005W BF1005 |
RF-MOSFET - integrated full biasing network, VDS=5V, gfs=24mS, Gps=19dB, F=1.4dB
Silicon N-Channel MOSFET Tetrode 硅N沟道MOSFET四极
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
