| PART |
Description |
Maker |
| M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
|
STMicroelectronics
|
| K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
Samsung semiconductor
|
| K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MT46V32M16P-5BJ |
Double Data Rate (DDR) SDRAM MT46V128M4 ?32 Meg x 4 x 4 banks MT46V64M8 ?16 Meg x 8 x 4 banks MT46V32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
| K4Y50024UC K4Y50024UC-JCA2 K4Y50024UC-JCB3 K4Y5002 |
512Mbit XDR TM DRAM(C-die)
|
Samsung semiconductor
|
| H55S5132EFR H55S5132EFR-75M |
512Mbit (16Mx32bit) Mobile SDR Memory
|
Hynix Semiconductor
|
| HYB25D512800AT-7F |
512Mbit Double Data Rate SDRAM
|
Infineon Technologies A...
|
| HY27US08121M HY27US16121M HY27USXXX HY27SS08121M H |
512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
|
HYNIX[Hynix Semiconductor]
|
| HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
| K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M39P0R9070E2 M39P0R9070E2ZADE M39P0R9070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
