| PART |
Description |
Maker |
| S29GL01GP90FFI012 S29GL01GP90FFIR12 S29GL128P11FFI |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 100 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 90 ns, PDSO56
|
Spansion, Inc.
SPANSION LLC
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆，32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc.
PROM
Spansion, Inc.
SPANSION LLC
|
| AM29LV017M |
16 Megabit (2 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory
|
Advanced Micro Devices
|
| S29GL064M90TFIR00 S29GL064M90TFIR02 S29GL064M90TFI |
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
|
SPANSION
|
| S70GL01GN00 S70GL01GN00FFI120 S70GL01GN00FFI122 S7 |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| AM29LV065MU90RWHF AM29LV065MU90RFF AM29LV065MU90EF |
64 Megabit (8 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
64 Megabit (8 M x 8-Bit) MirrorBit?/a> 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O?/a> Control
64 Megabit (8 M x 8-Bit) MirrorBit?/a> 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O?/a> Control
64 Megabit (8 M x 8-Bit) MirrorBit?3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O?Control
|
Advanced Micro Devices
http://
|
| AM29LV033MUU101EI AM29LV033MUU101FI AM29LV033MUU90 |
32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
|
AMD[Advanced Micro Devices]
|
| S71NS128NC0BJWRN3 S71NS-N-MCP S71NS064NC0BJWVT2 S7 |
MirrorBit 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory 1.8伏的MirrorBit只同步读/写，突发模式复用闪存
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29LV64MU101RPCI AM29LV64MU112RPCI AM29LV64MU90RP |
64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with 64兆位个M x 16位）的MirrorBit 3.0伏特，只有统一的闪存部
|
Advanced Micro Devices
|
