| PART |
Description |
Maker |
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| M58LT256JSB M58LT256JSB8ZA6 M58LT256JSB8ZA6E M58LT |
256 Mbit (16 Mb 】 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
| M58LV064B150ZA6T M58LV064A M58LV064A150N1T M58LV06 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128KT855 M58LR256KT855 M58LR128KT705 M58LR256 |
128 or 256 Mbit (】16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
|
Numonyx B.V
|
| M58LV064A150N1T |
64 Mbit 4Mb x16 or 2Mb x32 / Uniform Block / Burst 3V Supply Flash Memories
|
ST Microelectronics
|
| M58LT128HSB M58LT128HST M58LT128HST8ZA6E M58LT128H |
128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
|
STMicroelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| S29NS-N S29NS064N0SBJW000 S29NS128N0SBJW003 S29NS0 |
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 8M X 16 FLASH 1.8V PROM, 80 ns, PBGA44
Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory 16M X 16 FLASH 1.8V PROM, 80 ns, PBGA48
|
Spansion Inc.
Spansion, Inc.
|
| AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位）.5伏的CMOS只突发模式，双启动，同步写闪
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M58BW016BB100T3T M58BW016BB100T6T M58BW016BB100ZA3 |
16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
ER 16C 14#16 2#12 SKT PLUG
ER 16C 14#16 2#12 PIN PLUG
ER 22C 18#16 4#12 PIN PLUG
ER 12C 12#12 PIN PLUG
ER 22C 18#16 4#12 SKT PLUG
ER 8C 8#12 SKT PLUG
ER 2C 2#4 SKT PLUG
16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories 16兆位512KB的X32号，引导块，突发3V电源闪存
ER 26C 26#16 PIN PLUG 16兆位512KB的X32号，引导块，突发3V电源闪存
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
SGS Thomson Microelectronics
|
