| PART |
Description |
Maker |
| HD74LV2G04A |
Triple Inverters
|
HITACHI[Hitachi Semiconductor]
|
| 74HC3GU04GD |
Triple unbuffered inverter
|
NXP Semiconductors
|
| ISL6414IRZ-TK ISL6414 ISL6414IR ISL6414IR-T5K ISL6 |
Hex Inverters 14-SO -40 to 85 TRIPLE OUTPUT, FIXED POSITIVE LDO REGULATOR, QCC16
Triple Output, Low-Noise LDO Regulator with Integrated Reset Circuit
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| ML74WLCE |
Inverter (unbuffered) and OR Gate (unbuffered)
|
Minilogic Device Corporation Limited
|
| M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M374S6553BTS-C7A M366S2953BTS-C7A M366S3354BTS M36 |
SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| HYMD216726A6J-J HYMD216726AL6J-J |
Unbuffered DDR SO-DIMM
16Mx72|2.5V|J|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| MC74F14D MC54_74F14 ON1240 74F14 MC74F13N MC74F13 |
SCHMITT TRIGGERS DUAL 4-INPUT NAND/HEX INVERTERS 施密特触发器输入NAND /六角逆变
SCHMITT TRIGGERS DUAL 4-INPUT NAND/HEX INVERTERS FAST SCHOTTKY TTL
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
ON Semi
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
