PART |
Description |
Maker |
EDD51321DBH-5BTS-F EDD51321DBH-6ETS-F EDD51321DBH- |
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range) 512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range)
|
Elpida Memory
|
EDD51323DBH-5BLS-F EDD51323DBH-6ELS-F EDD51323DBH- |
512M bits DDR Mobile RAM?/a> WTR (Wide Temperature Range), Low Power Function 512M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
Elpida Memory
|
K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|
K4X56163PG |
16M x16 Mobile-DDR SDRAM
|
Samsung semiconductor
|
IS46LR32640A |
16M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
WEDPND16M72S-200BI WEDPND16M72S-200BM WEDPND16M72S |
200MHz; 2.5V power supply; 16M x 72 DDR SDRAM 250MHz; 2.5V power supply; 16M x 72 DDR SDRAM 266MHz; 2.5V power supply; 16M x 72 DDR SDRAM
|
White Electronic Designs
|
HYMD216M646C6-H HYMD216M646C6-J HYMD216M646C6-K HY |
Unbuffered DDR SO-DIMM 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3) 128Mb (16Mx8) DDR 266B (2.5-3-3) 16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
HYB25D128160ATL-7 HYB25D128400ATL-6 HYB25D128400AT |
8M X 16 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.8 ns, PDSO66 PLASTIC, TSOP2-66 8M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66 32M X 4 DDR DRAM, 0.75 ns, PDSO66 PLASTIC, TSOP2-66 128 Mbit Double Data Rate SDRAM 128兆双倍数据速率SDRAM
|
Infineon Technologies AG
|
|