| PART |
Description |
Maker |
| EP7312-CV EP731205 EP7312-CB-90 EP7312-IV-90 EP731 |
High-performance, Low-power, System-on-chip with SDRAM & Enhanced with SDRAM & Enhanced
IC ARM720T MCU 74MHZ 208-LQFP 32-BIT, FLASH, 74 MHz, RISC MICROCONTROLLER, PQFP208
|
Cirrus Logic, Inc.
|
| EP7312-IV-90 EP7312-EB-90 EP7312-IR-90 EP7312-CB-9 |
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 32-BIT, FLASH, 90 MHz, RISC MICROCONTROLLER, PBGA204
HIGH-PERFORMANCE, LOW-POWER SYSTEM ON CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE 高性能，低功耗的片上系统的SDRAM和增强数字音频接
|
Cirrus Logic, Inc.
CIRRUS LOGIC INC
|
| M65KA128AE |
Low Power SDRAM
|
STMicroelectronics
|
| CMS4A16LAF CMS4A16LAG CMS4A16LAH |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
| CMS3232LAF CMS3232LAG CMS3232LAH CMS3232LAX-75XX |
32M(1Mx32) Low Power SDRAM
|
FIDELIX
|
| CMS3232LAX-75EX |
32M(1Mx32) Low Power SDRAM
|
FIDELIX
|
| HYB25L256160AF-7.5 HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications
|
Infineon
|
| V55C2128164VB V55C2128164VT V55C2128164V |
128Mbit LOW-POWER SDRAM 2.5 VOLT, TSOP II / BGA PACKAGE 8M X 16
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| EP7312-IV-C EP7311 EP7311-CB-C EP7311-CR-C EP7311- |
HIGH-PERFORMANCE, LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE
|
CIRRUS[Cirrus Logic]
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
