PART |
Description |
Maker |
2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A) Medium Power Transistor (?32V,?1A) Power Transistor (?60V, ?3A) Low-frequency Transistor (-80V, -0.5A) Power Transistor (?80V, ?1A) Low VCE(sat) Transistor (?20V, ?3A) Power transistor (?20V, ?2A) General purpose amplification (?30V, ?1A) Low frequency amplifier Medium power transistor (−60V, −0.5A)
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ROHM[Rohm]
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2SA2091S 2SA2091STPQ |
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN Medium power transistor (60V/ 1A) Medium power transistor (−60V, −1A) Medium power transistor (-60V, -1A)
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TE Connectivity, Ltd. ROHM[Rohm]
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CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q 10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P Audio Frequency Power Amplifier and Low Speed Switching
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CDIL[Continental Device India Limited]
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CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y 25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体 25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
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Continental Device India, Ltd. CDIL[Continental Device India Limited] Continental Device Indi...
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CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. 30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. PNP Silicon Epitaxial Power Transistor
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CDIL[Continental Device India Limited]
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BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd 20 V, 1 A PNP medium power transistor
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NXP Semiconductors
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2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
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TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
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2SC2982 E000777 |
TRANSISTOR (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) 晶体管(STOROBO闪光,中等功率放大器应用 TRANSISTOR (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
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Toshiba, Corp. Toshiba Corporation Toshiba Semiconductor
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SG2823 SG2823J_DESC SG2823L_DESC SG2823N SG2803J S |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 0.5 A, 50 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR POWERQUICC II HIP4 REV B From old datasheet system Driver - Medium Current Array
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Microsemi, Corp. MICROSEMI[Microsemi Corporation]
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L2SA1036KQLT1G L2SA1036KRLT1G |
Medium Power Transistor Epitaxial planar type PNP silicon transistor
|
Leshan Radio Company
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BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏,1安PNP型中等功率晶体管 Si, POWER TRANSISTOR 45 V, 1 A PNP medium power transistors
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NXP Semiconductors N.V.
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