| PART |
Description |
Maker |
| XN01119 XN1119 |
Composite Device - Composite Transistors
From old datasheet system
Silicon PNP epitaxial planer transistor
|
Panasonic Semiconductor
|
| RT2C00M |
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RT2A00M |
COMPOSITE TRANSISTOR FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| XN06435 XN06435XN6435 XN6435 |
Composite Device - Composite Transistors
From old datasheet system
XN06435（XN6435-复合晶体
|
Panasonic
|
| RT3K11M |
Composite Transistor
|
Isahaya Electronics Corporation
|
| XN04116 XN04116XN4116 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN06534 XN06534XN6534 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN01115 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XN01114 |
Composite Device - Composite Transistors
From old datasheet system
|
panasonic
|
| XP05501 |
Composite Device - Composite Transistors 复合设备-复合晶体
|
Honeywell International, Inc.
Panasonic
|
