PART |
Description |
Maker |
VUM33-05N VUM33-05 IXYSCORP-VUM33-05N |
Power MOSFET Stage for Boost Converters 47 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system Power Factor Correction Modules: MOSFET
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IXYS, Corp. IXYS[IXYS Corporation]
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IRFR6215PBF IRFU6215PBF IRFR6215TR IRFR6215TRL IRF |
Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET 13 A, 150 V, 0.295 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA 175°C Operating Temperature
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International Rectifier
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IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET? Power MOSFET HEXFET㈢ Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
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International Rectifier
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IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??) 4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
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IRF[International Rectifier]
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IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五(巴西)直| 36A条(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A) 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
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International Rectifier, Corp. http:// IRF[International Rectifier]
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IXTH36N50P IXTT36N50P IXTV36N50P IXTV36N50PS IXTQ3 |
MOSFET N-CH 500V 36A TO-247 36 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD PolarHV Power MOSFET
|
IXYS, Corp. IXYS Corporation
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VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
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Microsemi, Corp. Microsemi Corporation
|
IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET 14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET 16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET 4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET 9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET 2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET 10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET 3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET 5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET 13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET 4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc. Molex, Inc. VISHAY INTERTECHNOLOGY INC
|
IRFBA22N50APBF |
24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA HEXFET㈢Power MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
IRFBE30L IRFBE30S |
800V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
|
International Rectifier
|
APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET POWER MOS 7 R MOSFET
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Microsemi, Corp. ADPOW[Advanced Power Technology]
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