| PART |
Description |
Maker |
| BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
| CEM8207 CEM8207ESD |
20V N Channel MOS
Dual N-Channel Enhancement Mode Field Effect Transistor
|
Chino-Excel Technology Corp.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix
Vishay Telefunken
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| BF998WR |
N-channel dual-gate MOS-FET
|
Philips
|
| 2N7002DSPT |
Dual N-Channel Enhancement MOS FET
|
Chenmko Enterprise Co. Ltd.
|
| 2N7002VPT |
Dual N-Channel Enhancement MOS FET
|
Chenmko Enterprise Co. ...
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
