| PART |
Description |
Maker |
| HSG2002 HSG2002TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| SGA-8343Z |
LOW NOISE HIGH GAIN SIGE HBT
|
Sirenza Microdevices
|
| CGA-3318Z |
Dual CATV Broadband High Linearity SiGe HBT Amplifier
|
sirenza.com
|
| SGB-2233 |
DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology
|
RF Micro Devices
|
| SGA-9089Z |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
RF Micro Devices
|
| NESG2021M05 NESG2021M05-T1-A |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
| HA31005ANP HA31005ANPTL-E |
SiGe MMIC High Frequency Power Amplifier
|
Renesas Electronics Corporation
|
| 2SA1969 |
High-Frequency Medium-Output Amplifier, Medium-Current Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| EB-ASG402-900 ASG402 EB-ASG402-2000 |
DC-3000 MHz SiGe HBT Amplifier
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC[ETC]
Advanced Semiconductor Business Inc
|
| THM1001TE |
SiGe HBT MMIC POWER AMPLIFIER
|
TACHYONICS[Tachyonics CO,. LTD]
|
| NESG2101M16 NESG2101M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范
|
NEC, Corp.
NEC[NEC]
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
