Part Number Hot Search : 
FDLL700 HOA0891 244MT VAL1Z 80200 AD7545SD MC705C SR140
Product Description
Full Text Search

BLF6G20LS-110 - Power LDMOS transistor

BLF6G20LS-110_4223445.PDF Datasheet


 Full text search : Power LDMOS transistor
 Product Description search : Power LDMOS transistor


 Related Part Number
PART Description Maker
BLF6G22-180RN BLF6G22LS-180RN 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
NXP Semiconductors N.V.
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
NXP Semiconductors N.V.
BLF6G27LS-40P BLF6G27L-40P 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
BLF7G27L-90P BLF7G27LS-90P 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
BLF6G22L-40BN 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor
NXP Semiconductors N.V.
BLF871S112 BLF871-15 A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
NXP Semiconductors N.V.
BLL6H0514-25 LDMOS driver transistor BLL6H0514-25<SOT467C (LDMOST)|<<http://www.nxp.com/packages/SOT467C.html<1<Always Pb-free,;
LDMOS driver transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
NXP Semiconductors N.V.
PTF080601F PTF080601E PTF080601A PTF080601 LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
INFINEON[Infineon Technologies AG]
BLF7G27L-140 Power LDMOS transistor
Philips Semiconductors
BLF8G20LS-140GV Power LDMOS transistor
NXP Semiconductors
BLF7G22L-250P Power LDMOS transistor
Philips Semiconductors
BLF7G15LS-200 Power LDMOS transistor
NXP Semiconductors N.V.
 
 Related keyword From Full Text Search System
BLF6G20LS-110 stmicroelectronics BLF6G20LS-110 Mode BLF6G20LS-110 Rectifier BLF6G20LS-110 intersil BLF6G20LS-110 Volt
BLF6G20LS-110 Step BLF6G20LS-110 Sipat BLF6G20LS-110 single cell BLF6G20LS-110 bus switch BLF6G20LS-110 Byte
 

 

Price & Availability of BLF6G20LS-110

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.68175601959229