PART |
Description |
Maker |
RC28F128J3D-75 TE28F640J3D-75 JS28F128J3D-75 JS28F |
Numonyx Embedded Flash Memory
|
Numonyx B.V
|
JS28F256P30B95 PC28F256P30B85 PC28F256P30T85 TE28F |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
PC28F128P30 |
Numonyx StrataFlash Embedded Memory
|
Numonyx
|
PC28F128J3D |
Embedded Flash Memory
|
Intel
|
TE28F128J3D |
Embedded Flash Memory
|
Intel
|
JS28F064M29EWHA JS28F064M29EWBA JS28F064M29EWLA RC |
Parallel NOR Flash Embedded Memory
|
Micron
|
RC28F256M29EWHA RC28F256M29EWHB RC28F256M29EWLA PC |
Parallel NOR Flash Embedded Memory
|
Micron Technology Microsemi Corporation
|
S34MS08G2 |
8 Gb, 4-Bit ECC, x8 I/O and 1.8 V VCC NAND Flash Memory for Embedded
|
Cypress Semiconductor
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
AM28F512A AM28F512A-90PIB AM28F512A-120EC AM28F512 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
AM28F256A AM28F256A-120EC AM28F256A-120ECB AM28F25 |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|