| PART |
Description |
Maker |
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| AS217-000 AS217-00006 |
PHEMT GaAs IC High-Linearity 3 V T/R SPDT Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| AS192-306 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz
|
Alpha Industries
Skyworks Solutions Inc.
|
| AS221-306 |
PHEMT GaAs IC High Power SP4T Switch 0.1 - 2.5 GHz
|
Skyworks Solutions Inc.
|
| AS218-000 |
PHEMT GaAs IC High Power Transfer Switch DC-6 GHz
|
Skyworks Solutions
|
| 636ST89E HMC636ST8911 HMC636ST89E |
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| AS192-000 |
PHEMT GaAs IC High-Power SP4T Switch 0.1-2.5 GHz
|
Skyworks Solutions Inc.
|
| AS192-000 |
PHEMT GaAs IC High Power SP4T Switch 0.1-2.5 GHz
|
Skyworks Solutions
|
| AS236-321 AS236-321LF |
PHEMT GaAs IC High-Power 4-CTL DPDT Switch LF-6 GHz
|
Skyworks Solutions Inc.
|
