PART |
Description |
Maker |
D1209UK D1209 |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-400MHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-400MHz,推挽)
|
TT electronics Semelab, Ltd. TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用(应用于电容器话筒沟道结型场效应管 From old datasheet system N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
2SJ517 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ518 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ548 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
HAT2202C HAT2202C-15 |
Silicon N Channel MOS FET powerswitching Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS From old datasheet system
|
ON Semiconductor Motorola, Inc.
|
MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
|
ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
|
2SK808A 2SK808 |
Silicon N-channel Power F-MOS FET Silicon N Channel Power FMOS FET
|
Panasonic Semiconductor
|
MTM86627 |
Silicon P-channel MOS FET (FET)
|
Panasonic
|