| PART |
Description |
Maker |
| AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PTF180601 |
LDMOS Field Effect Transistor 60 W, DCS/PCS Band 1805-1880 MHz, 1930-1990 MHz
|
Infineon Technologies A...
|
| PH1920-90 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Socket; Circular Shell Style:Straight Plug; Insert Arrangement:11-98 无线功率晶体90瓦，1930-1990兆赫
Wireless Power Transistor 90 Watts 1930-1990 MHz
Wireless Power Transistor 90 Watts, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| MAMDES0010 |
E-Series I/Q Modulator 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| 1920A05 |
5 W, 26 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920A12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| 1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
LEM
|
| PH1920-45 |
WIRELESS BIPOLAR POWER TRASISTOR 45W 1930-1990 MHZ
|
Tyco Electronics
|
| PTFB192503EL PTFB192503FL |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
