| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| BLL1214-35 BLL1214-35_1 |
L-band radar LDMOS transistor
L-band radar LDMOS driver transistor
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| L88016-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF8G22LS-200V |
Power LDMOS transistor
|
NXP Semiconductors
|
| L8801P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| L8821P-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
| BLF8G22LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
| BLF6G22LS-75 |
Power LDMOS transistor
|
NXP Semiconductors
|
| LR301-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
