| PART |
Description |
Maker |
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| Q68000-A9124 CGY94 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier Operating voltage range: 2.7 to 6 V)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RF2138PCBA RF2138 |
3V GSM POWER AMPLIFIER 3V的的GSM功率放大
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| CGY93P |
GSM 2 stage Power Amplifier MMIC
|
Infineon
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6223R AWT6223RM26P8 AWT6223RM26P9 |
WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168R |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS
|
| AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| MRFIC1870 MRFIC1870PP |
3.2V GSM GaAs Integrated Power Amplifier
From old datasheet system
|
Motorola
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
