PART |
Description |
Maker |
HYB18RL25632AC HYB18RL25616AC |
256 Mbit DDR Reduced Latency DRAM
|
INFINEON[Infineon Technologies AG]
|
MT44K16M36 |
576Mb: x18, x36 RLDRAM 3
|
Micron Technology
|
SI4392DY SI4392DY06 |
N-Channel Reduced Qg, Fast Switching WFET? N-Channel Reduced Qg, Fast Switching WFET庐 N-Channel Reduced Qg, Fast Switching WFET㈢
|
Vishay Siliconix
|
MT49H16M18 MT49H32M9 |
288Mb: x9, x18, x36 2.5V VEXT, 1.8V VDD, HSTL, CIO, RLDRAM II
|
Micron Technology
|
DVJR2225-LF DVJR1.050-LF DVJR4.735-LF DVJR4.750-LF |
SURFACE MOUNT ELECTROLYTIC 105C REDUCED SIZE DVJR ELECTROLYTIC 105°C REDUCED SIZE
|
Dubilier
|
SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg,快速开关MOSFET N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和,快速开关MOSFET N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HY |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M x 72 Bit ECC DRAM Module unbuffered 4M x 64 Bit DRAM Module unbuffered 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组 GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168 3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
LTC2401 LTC2401CMS LTC2401IMS LTC2402 LTC2402CMS L |
1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C 1-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10 1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: 0°C to 70°C 2-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10 1-/2-Channel 24-Bit µPower No Latency Delta-Sigma ADC in MSOP-10; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 85°C 2-CH 24-BIT DELTA-SIGMA ADC, SERIAL ACCESS, PDSO10 1-/2-Channel 24-Bit mPower No Latency DSTMADCs in MSOP-10 1-/2-Channel 24-Bit PowerNo Latency Delta-SigmaADC in MSOP-10 1-/2-Channel 24-Bit µPowerNo Latency Delta-SigmaADC in MSOP-10
|
Linear Technology, Corp.
|
CY7C1543V18 CY7C1543V18-300BZC CY7C1543V18-300BZI |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|