| PART |
Description |
Maker |
| HJD-2Z-1.9G |
1800 MHz - 1990 MHz RF/MICROWAVE 180 DEGREE HYBRID COUPLER, 0.3 dB INSERTION LOSS-MAX
HYBRID JUNCTION
|
MERRIMAC INDUSTRIES INC
Merrimac Industries, Inc.
|
| PXFC192207FHV3R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 220 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
| PXFC191507FCV1R250XTMA1 |
Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 ?1990 MHz
|
Infineon Technologies A...
|
| 1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor
35 Watt - 28 Volts, Class C Microwave 1600 - 1800 MHz
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 12A I(C) | FO-57DVAR 晶体管|晶体管|叩| 45V的五（巴西）总裁| 12A条一c）|7DVAR
|
GHZTECH[GHz Technology]
Fairchild Semiconductor, Corp.
|
| ADE-R35LH |
High Reliability Mixer Level 10 (LO Power 10 dBm) 1800 to 3500 MHz
|
Mini-Circuits
|
| AM2018-33GI068 AM2018-100JC068 AM2018-20/BTC AM201 |
FPGA, 100 CLBS, 1800 GATES, 33 MHz, CPGA68
FPGA, 100 CLBS, 1800 GATES, 100 MHz, PQCC68
FPGA, 100 CLBS, 1800 GATES, 20 MHz, CPGA84
FPGA, 100 CLBS, 1800 GATES, 33 MHz, CPGA84
FPGA, 64 CLBS, 1200 GATES, 100 MHz, PDIP48
|
ADVANCED MICRO DEVICES INC
|
| AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| HYW-5343-X3-716-05 HYW-5343-X3-NNN-05 |
1700 MHz - 1990 MHz RF/MICROWAVE 90 DEGREE HYBRID COUPLER, 0.4 dB INSERTION LOSS-MAX
|
Cypress Semiconductor, Corp.
|
| MADCSM0001TR MADCSM0001 MADCSM0001SMB |
Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
