PART |
Description |
Maker |
NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
NAND02G-B2C NAND02GR3B2BZA1E NAND02GR4B2BZA1F NAND |
1千兆2千兆位,2112 Byte/1056字的页面.8V/3VNAND闪存 1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 1千兆千兆位,2112 Byte/1056字的页面.8V/3V,NAND闪存
|
意法半导 STMicroelectronics N.V.
|
NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
V23814-U1306-M130 V23815-U1306-M130 V23815-U1306-M |
SPECIALTY TELECOM CIRCUIT, XFO72 1.6 Gbit/s Rx Parallel Optical Link (... 1.6 Gbit/s Tx Parallel Optical Link (... Parallel Optical Link: PAROLI T X AC, 1.6 Gbit/s 并行光链路:帕罗利德克萨斯州交流.6 Gbit / s
|
INFINEON[Infineon Technologies AG]
|
NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V http://
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
TH58NS100DC |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )
|
Toshiba Semiconductor
|
2 |
2 Gbit/s Fibre Channel to PCI host adapters user's guide v2.0 3/02 2 Gbit/s Fibre Channel to PCI host adapters user锛? guide v2.0 3/02
|
|
V23832-T2531-M101 V23832-R111-M101 V23832-R121-M10 |
PAROLI 2 Tx AC, 1.25 Gbit/s
|
INFINEON[Infineon Technologies AG]
|
FOA1121A1 FOA1122A1 |
1.25 Gbit/s Transimpedance Amplifier
|
Infineon
|