| PART |
Description |
Maker |
| M29DW128F70NF6E M29DW128F60NF6E M29DW128F60NF6F M2 |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
Numonyx B.V
|
| M69KB128AA70AW8 M69KB128AA70CW8 M69KB128AA70DW8 M6 |
128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
|
STMicroelectronics
|
| M58LW128H115ZA1 |
128 MBIT(8MB X16, UNIFORM BLOCK, BURST) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M30L0R7000T0ZAQE M30L0R7000B0ZAQ M30L0R7000XX M30L |
AB 35C 7#12,28#16 PIN RECP
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 128兆位兆x16插槽，多银行，多层次，多突发），1.8V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| AT52SQ1283J |
128-Mbit Flash 32-Mbit PSRAM Stack Memory.
|
Atmel
|
| M30L0R8000B0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST
|
