| PART |
Description |
Maker |
| K6R1016V1D K6R1016V1D-JI080 K6R1016V1D-UI080 |
64K X 16 STANDARD SRAM, 8 ns, PDSO44
IC,SRAM,64KX16,CMOS,SOJ,44PIN,PLASTIC
|
samsung
|
| KM6161002B KM6161002B-10 KM6161002B-12 KM6161002B- |
CMOS SRAM
64Kx16 Bit High Speed Static RAM(5.0V Operating), Revolutionary Pin out.
|
Samsung Electronic
Samsung semiconductor
|
| BS616LV1016 |
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconductor
|
| BS616LV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| AS5C4009LLDG-100/XT AS5C4009LLDG-100/IT AS5C4009LL |
512K*8 SRAM ultra Low power SRAM AVAILABLE AS MILITARY SPECIFICATION
x8 SRAM x8的SRAM
|
Austin Semiconductor, Inc
|
| GM76U256C GM76U256CE GM76U256CL GM76U256CLE GM76U2 |
x8 SRAM 32K X 8 STANDARD SRAM, 120 ns, PDSO28
x8 SRAM 32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K x8 bit 3.0V Low Power CMOS slow SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
