| PART |
Description |
Maker |
| MA650.ST.AB.002.DZ |
Advanced RF Design and Materials
|
Taoglas antenna solutio...
|
| MA9XXXA |
Radiation Hard Advanced Gate Array Design System
|
GEC Plessey Semiconductors
|
| RU3020L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| RU3050L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| RU1H36L |
N-Channel Advanced Power MOSFET Super High Dense Cell Design
|
Ruichips Semiconductor ...
|
| DMEG250-3 |
250 W, 50 V all devices utilize the most advanced design and process technologies, there features provide the most consistent and reliable chip
|
Acrian
|
| BUL49A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
|
| BUL72B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
| BUL58A BUL56A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
|
