| PART |
Description |
Maker |
| UPD424190A |
262144 x 18-Bit Dynamic CMOS RAM
|
NEC Electronics
|
| M5M5V208FP-10L M5M5V208FP-10LL M5M5V208FP-12L M5M5 |
From old datasheet system
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word8位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静态RAM
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM 2097152位（262144 - Word位）的CMOS静RAM
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| M5M44260CJ M5M44260CJ-5 M5M44260CJ-5S M5M44260CJ-6 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| UPD41257 UPD41257C-15 UPD41257C-12 UPD41257C-20 UP |
262144 X 1-BIT DYNAMIC NMOS RAM
|
NEC
|
| M5M44260CJ-7 |
FAST PAGE MODE 4194304-BIT (262144-WORD BY 16-BIT) DYNAMIC RAM 快速页面模194304位（262144字由16位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 60ns
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
IC REG LDO 1A 12V SHDN TO220FP-5
null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4,194,304 words x 4 bit CMOS dynamic RAM, 50ns
4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| M5M5V416CWG-85HI |
4194304-bit (262144-word by 16-bit) CMOS static RAM
|
Mitsubishi Electric Corporation
|
| M5M5V416BUG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V416CWG-55HI02 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
http://
Renesas Electronics Corporation
|
| M5M54R16AJ-10 M5M54R16AJ-12 M5M54R16AJ-15 M5M54R16 |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM 4194304位（262144字由16位）的CMOS静态RAM
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| UPD41256 |
262144 Dynamic NMOS RAM
|
NEC Electronics
|
| KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM
V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor
Samsung Electronic
|
