| PART |
Description |
Maker |
| HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
| TTS3816B4E-7 TTS3816B4E TTS3816B4E-6 TTS3816B4E-6A |
2M x 16Bit x 4 Banks synchronous DRAM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung Electronic
Samsung semiconductor
|
| K4S51163LF-YPC/L/F1L K4S51163LF-YPC/L/F75 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M56163LG K4M56163LG-RN_F75 K4M56163LG-RN_G K4M56 |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
Samsung semiconductor
|
| K4S161622D-TC/L/I/P |
512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| IC42S16160 |
4M x 16Bit x 4 Banks (256-MBIT) SDRAM 4米16 × 4银行56兆）内存
|
Integrated Silicon Solution, Inc.
|
| K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D2616 |
2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4，银行双数据速率同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4M51163LC-RN75 K4M51163LC-RG75 K4M51163LC-RF1H K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
