| PART |
Description |
Maker |
| KVR100X72C2/512 |
512MB 100MHz ECC CL2 DIMM 512MB00MHzECC的CL2的内
|
Samsung Semiconductor Co., Ltd.
|
| M378T2953BGZ0-CD5_CC M378T2953BGZ3-CD5_CC M378T335 |
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| KVR100X64SC2/128 |
128MB 100MHz Non-ECC CL2 SODIMM 128MB00MHz的非ECC CL2的的SODIMM
|
Samsung Semiconductor Co., Ltd.
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| M378T6553CZ3-CCC M378T6553CZ3-CD5 M378T6553CZ3-CE6 |
DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC
|
SAMSUNG[Samsung semiconductor]
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG2256M72ASSR202AJD3MG W3EG2256M72ASSR202AJD3XG |
512M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WHITE ELECTRONIC DESIGNS CORP
White Electronic Design...
|
| MPMB62D-68KX3 |
PC-2700 CL2.5 184pin DDR DIMM
|
List of Unclassifed Manufacturers
ETC
|
| HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA)
128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| HDD16M72D9W HDD16M72D9W-13A HDD16M72D9W-10A |
DDR SDRAM Module 128Mbyte (16Mx72bit), based on 16Mx8, 4Banks 4K Ref., 184Pin-DIMM with Unbuffered ECC DDR SDRAM内存模块128Mbyte6Mx72bit），基于6Mx8Banks 4K的参考。，184Pin，与无缓冲ECC内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| HY5DU121622AT |
512Mb DDR SDRAM
|
Hynix Semiconductor
|
